DocumentCode :
1086461
Title :
Numerical methods for semiconductor device simulation
Author :
Bank, Randolph E. ; Rose, Donald J. ; Fichtner, Wolfgang
Author_Institution :
University of California at San Diego, La Jolla, CA
Volume :
30
Issue :
9
fYear :
1983
fDate :
9/1/1983 12:00:00 AM
Firstpage :
1031
Lastpage :
1041
Abstract :
This paper describes the numerical techniques used to solve the coupled system of nonlinear partial differential equations which model semiconductor devices. These methods have been encoded into our device simulation package which has successfully simulated complex devices in two and three space dimensions. We focus our discussion on nonlinear operator iteration, discretization and scaling procedures, and the efficient solution of the resulting nonlinear and linear algebraic equations. Our companion paper [13] discusses physical aspects of the model equations and presents results from several actual device simulations.
Keywords :
Couplings; Finite difference methods; Laplace equations; Nonlinear equations; Numerical simulation; Partial differential equations; Poisson equations; Semiconductor device packaging; Semiconductor devices; Steady-state;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21257
Filename :
1483158
Link To Document :
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