DocumentCode
1086461
Title
Numerical methods for semiconductor device simulation
Author
Bank, Randolph E. ; Rose, Donald J. ; Fichtner, Wolfgang
Author_Institution
University of California at San Diego, La Jolla, CA
Volume
30
Issue
9
fYear
1983
fDate
9/1/1983 12:00:00 AM
Firstpage
1031
Lastpage
1041
Abstract
This paper describes the numerical techniques used to solve the coupled system of nonlinear partial differential equations which model semiconductor devices. These methods have been encoded into our device simulation package which has successfully simulated complex devices in two and three space dimensions. We focus our discussion on nonlinear operator iteration, discretization and scaling procedures, and the efficient solution of the resulting nonlinear and linear algebraic equations. Our companion paper [13] discusses physical aspects of the model equations and presents results from several actual device simulations.
Keywords
Couplings; Finite difference methods; Laplace equations; Nonlinear equations; Numerical simulation; Partial differential equations; Poisson equations; Semiconductor device packaging; Semiconductor devices; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21257
Filename
1483158
Link To Document