Title :
Modeling the gate more accurately for power MOSFETs
Author :
Wunderlich, Ronnie A. ; Ghosh, Prasanta K.
Author_Institution :
Celestica Power Syst., Endicott, NY, USA
fDate :
1/1/1994 12:00:00 AM
Abstract :
In recent years, power MOSFET devices have replaced the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generates a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device
Keywords :
circuit analysis computing; digital simulation; insulated gate field effect transistors; power transistors; semiconductor device models; correlation; gate to source characteristics; modeling techniques; power MOSFETs; simulation; transient behavior; Bipolar transistors; Capacitance; Capacitors; Character generation; Circuits; MOSFETs; Power system modeling; Power system transients; Senior members; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
