Title :
A novel finite-element approach to device modeling
Author :
Machek, Jörg ; Selberherr, Siegfried
Author_Institution :
Technical University of Vienna, Vienna, Austria
fDate :
9/1/1983 12:00:00 AM
Abstract :
A finite-element device-simulation program is presented. An adaptive grid-refinement procedure is used to minimize the number of nodes. Two different kinds of elements are generated (triangles and rectangles) thus enabling the use of an irregular mesh. Different shape functions have been developed for the three variables; they are linear/ bilinear for the electric potential and linear/bilinear in Bernoulli-like functions for the quasi-Fermi potentials. Numerical examples are presented.
Keywords :
Electric potential; Finite element methods; Mesh generation; Nonlinear equations; Partial differential equations; Poisson equations; Semiconductor devices; Shape; Structural engineering; Terminology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21262