DocumentCode :
1086525
Title :
A novel finite-element approach to device modeling
Author :
Machek, Jörg ; Selberherr, Siegfried
Author_Institution :
Technical University of Vienna, Vienna, Austria
Volume :
30
Issue :
9
fYear :
1983
fDate :
9/1/1983 12:00:00 AM
Firstpage :
1083
Lastpage :
1092
Abstract :
A finite-element device-simulation program is presented. An adaptive grid-refinement procedure is used to minimize the number of nodes. Two different kinds of elements are generated (triangles and rectangles) thus enabling the use of an irregular mesh. Different shape functions have been developed for the three variables; they are linear/ bilinear for the electric potential and linear/bilinear in Bernoulli-like functions for the quasi-Fermi potentials. Numerical examples are presented.
Keywords :
Electric potential; Finite element methods; Mesh generation; Nonlinear equations; Partial differential equations; Poisson equations; Semiconductor devices; Shape; Structural engineering; Terminology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21262
Filename :
1483163
Link To Document :
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