Localized Lasing Mode in GaN Quasi-Periodic Nanopillars at Room Temperature

Author

Tzeng-Tsong Wu ; Chih-Cheng Chen ; Hao-wen Chen ; Tien-Chang Lu ; Shing-Chung Wang ; Cheng-Huang Kuo

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

19

Issue

4

fYear

2013

fDate

July-Aug. 2013

Firstpage

4900206

Lastpage

4900206

Abstract

In this paper, GaN quasi-periodic nanopillars were fabricated and investigated. The quasi-periodic nanopillars were realized by nanoimprint technique and selective area growth. Localized lasing mode was identified in the GaN quasi-periodic nanopillars. The threshold energy density and lasing wavelength were 40 mJ/cm² and 369 nm, respectively. The divergence angle and near-field lasing spot were measured to be 10.5° and 3.6 μm, respectively. The spontaneous emission coupling factor of localized lasing mode was estimated to be 9.4 × 10^-3. The mode patterns in the real and reciprocal spaces were calculated by the multiple scattering method to confirm the mode localization behavior.

Keywords

III-V semiconductors; gallium compounds; laser modes; nanolithography; nanostructured materials; semiconductor lasers; spontaneous emission; wide band gap semiconductors; GaN; laser divergence angle; localized lasing mode; mode localization; mode patterns; nanoimprint technique; near-field lasing spot; quasiperiodic nanopillars; selective area growth; spontaneous emission coupling factor; temperature 293 K to 298 K; threshold energy density; wavelength 369 nm; Gallium nitride; Nanostructured materials; GaN; mode localization; nanopillar;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2247570

Filename

6488713