Title :
Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)
Author :
Xie, Q. ; Kalburge, A. ; Chen, P. ; Madhukar, A.
Author_Institution :
Photonic Mater. & Devices Lab., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
We report the first observation of lasing from vertically self-organized multiple stacks of electronically uncoupled InAs three-dimensional island quantum boxes grown via molecular beam epitaxy on GaAs (001) substrates. A low-threshold current density of 310 A/cm/sup 2/ at 79 K is found for a stack of five sets of islands corresponding to 2 ML InAs depositions separated by 36 monolayer GaAs spacers grown via migration enhanced epitaxy. The distribution of the island volumes (1.5/spl times/10/sup 5/ /spl Aring//sup 3/-4 /spl times/10/sup 5/ /spl Aring//sup 3/) gives, as expected, a multitude of laser lines between 980 mm and 996 nm.
Keywords :
III-V semiconductors; current density; indium compounds; island structure; molecular beam epitaxial growth; quantum well lasers; self-adjusting systems; semiconductor growth; semiconductor quantum dots; substrates; 79 K; 980 nm; 996 nm; GaAs; GaAs (001); GaAs (001) substrates; InAs; InAs deposition; electronically uncoupled InAs three-dimensional island quantum boxes; laser lines; low-threshold current density; migration enhanced epitaxy; molecular beam epitaxy; monolayer GaAs spacers; quantum box lasers; vertically self-organized InAs three-dimensional island quantum boxes; vertically self-organized multiple stacks; Capacitive sensors; Current density; Epitaxial growth; Gallium arsenide; Molecular beam epitaxial growth; Optical sensors; Potential well; Semiconductor lasers; Strain control; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
