DocumentCode :
108665
Title :
IGBT: The GE Story [A Look Back]
Author :
Baliga, Jayant
Volume :
2
Issue :
2
fYear :
2015
fDate :
Jun-15
Firstpage :
16
Lastpage :
23
Abstract :
This article describes the events that led to the conception, development, and commercialization of the IGBT at the General Electric (GE) Company. A unique set of circumstances consisting of the diversity of GE product divisions, a corporate edict to maintain businesses leadership using innovations in technology, and a visionary management style from the top of the company formed the crucible for the gestation of IGBT technology.
Keywords :
insulated gate bipolar transistors; GE company; General Electric company; IGBT technology; Companies; Insulated gate bipolar transistors; Logic gates; MOSFET; Product design; Product development; Transistors;
fLanguage :
English
Journal_Title :
Power Electronics Magazine, IEEE
Publisher :
ieee
ISSN :
2329-9207
Type :
jour
DOI :
10.1109/MPEL.2015.2421753
Filename :
7130703
Link To Document :
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