Title :
High-power single-mode selectively oxidized vertical-cavity surface-emitting lasers
Author :
Weigl, B. ; Grabherr, M. ; Michalzik, R. ; Reiner, G. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
Single-mode vertical-cavity top-surface-emitting lasers with maximum output power of 2.7 mW and side-mode suppression of 50 dB have been fabricated using solid source MBE for growth and selective oxidation to define the 3-μm diameter active area. Threshold current is 290 μA and a maximum wallplug efficiency of 27% is obtained at an output power of 1 mW.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; molecular beam epitaxial growth; optical fabrication; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; /spl mu/m diameter active area; 1 mW; 2.7 mW; 200 muA; 27 percent; 3 mum; InGaAs; high-power single-mode selectively oxidized lasers; maximum output power; maximum wallplug efficiency; output power; selective oxidation; side-mode suppression; solid source MBE growth; threshold current; vertical-cavity surface-emitting lasers; Indium gallium arsenide; Optical surface waves; Oxidation; Power generation; Power lasers; Solid lasers; Stimulated emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
