High-power single-mode selectively oxidized vertical-cavity surface-emitting lasers

Author

Weigl, B. ; Grabherr, M. ; Michalzik, R. ; Reiner, G. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

8

Issue

8

fYear

1996

Firstpage

971

Lastpage

973

Abstract

Single-mode vertical-cavity top-surface-emitting lasers with maximum output power of 2.7 mW and side-mode suppression of 50 dB have been fabricated using solid source MBE for growth and selective oxidation to define the 3-μm diameter active area. Threshold current is 290 μA and a maximum wallplug efficiency of 27% is obtained at an output power of 1 mW.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; molecular beam epitaxial growth; optical fabrication; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; /spl mu/m diameter active area; 1 mW; 2.7 mW; 200 muA; 27 percent; 3 mum; InGaAs; high-power single-mode selectively oxidized lasers; maximum output power; maximum wallplug efficiency; output power; selective oxidation; side-mode suppression; solid source MBE growth; threshold current; vertical-cavity surface-emitting lasers; Indium gallium arsenide; Optical surface waves; Oxidation; Power generation; Power lasers; Solid lasers; Stimulated emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.508707

Filename

508707