Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors

Author

Huffaker, D.L. ; Graham, L.A. ; Deng, H. ; Deppe, D.G.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

8

Issue

8

fYear

1996

Firstpage

974

Lastpage

976

Abstract

Due to two improvements in cavity design, low-threshold lasing is achieved in oxidized vertical-cavity surface-emitting lasers incorporating upper dielectric distributed Bragg reflectors. Intracavity absorption is reduced by removal of a heavily p-type contact layer and the use of a low-loss MgF-ZnSe upper mirror. We report sub-100 μA lasing for a 7-μm diameter device, and sub-40 μA lasing for a 3-μm diameter device. The low-loss cavity design also allows for highly multimode operation at a low-bias current of 600 μA in a detuned cavity.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser modes; oxidation; quantum well lasers; surface emitting lasers; /spl mu/A continuous-wave lasing; /spl mu/A lasing; /spl mu/m diameter device; 3 mum; 40 muA; 600 muA; 7 mum; InGaAs; InGaAs QW laser; MgF-ZnSe; cavity design; detuned cavity; dielectric mirrors; highly multimode operation; intracavity absorption; low-bias current; low-loss MgF-ZnSe upper mirror; low-loss cavity design; low-threshold lasing; oxidized vertical-cavity surface-emitting laser; oxidized vertical-cavity surface-emitting lasers; p-type contact layer; upper dielectric distributed Bragg reflectors; Absorption; Dielectrics; Distributed Bragg reflectors; Fiber lasers; Gallium arsenide; Mirrors; Optical design; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.508708

Filename

508708