DocumentCode :
1086691
Title :
Thermal crosstalk in 4 x 4 vertical-cavity surface-emitting laser arrays
Author :
Wipiejewski, T. ; Young, D.B. ; Thibeault, B.J. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
8
Issue :
8
fYear :
1996
Firstpage :
980
Lastpage :
982
Abstract :
We measured thermal crosstalk in 4×4 VCSEL arrays with a 30-μm pitch between devices. The effective thermal resistance of laser diodes in two-dimensional (2-D) arrays is about 50% higher than that of single elements. The output power of the lasers is fairly temperature insensitive under constant voltage operation. From experiments we inferred values for the average thermal conductivity of AlAs-GaAs Bragg reflectors. We found anisotropy in the effective thermal conductivity with numbers of 0.28 W/(cmK) and 0.35 W/(cmK) for the transverse and lateral direction, respectively.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical crosstalk; semiconductor laser arrays; thermal resistance; /spl mu/m pitch; 2D arrays; 30 mum; 4/spl times/4 vertical-cavity surface-emitting laser arrays; AlAs-GaAs; AlAs-GaAs Bragg reflectors; InGaAs QW lasers; VCSEL arrays; anisotropy; average thermal conductivity; constant voltage operation; effective thermal conductivity; effective thermal resistance; laser diodes; lateral direction; output power; temperature insensitive; thermal crosstalk; transverse direction; Crosstalk; Diode lasers; Electrical resistance measurement; Optical arrays; Semiconductor laser arrays; Surface emitting lasers; Surface resistance; Thermal conductivity; Thermal resistance; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.508710
Filename :
508710
Link To Document :
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