Title :
Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates
Author :
Sale, T.E. ; Roberts, J.S. ; Whitbread, N.D. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
We report the operation of strained layer In/sub 0.20/Ga/sub 0.80/As quantum well lasers grown on (211)B GaAs substrates, thus incorporating a piezoelectric field. Growth was by atmospheric pressure metal-organic vapor phase epitaxy (MOVPE). The threshold current density of a 1000 μm×75 μm device is 91 A/spl middot/cm/sup -2/ and waveguide transparency is estimated at 32 A/spl middot/cm/sup -2/ for a simple separate confinement heterostructure (SCH) emitting at 982 nm.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; piezoelectricity; quantum well lasers; semiconductor growth; substrates; vapour phase epitaxial growth; waveguide lasers; (211)B GaAs substrates; (211)B oriented GaAs substrates; 1000 mum; 75 mum; 982 nm; GaAs; InGaAs-GaAs; MOVPE growth; atmospheric pressure metal-organic vapor phase epitaxy; low-threshold piezoelectric-strained InGaAs-GaAs QW lasers; piezoelectric field; simple separate confinement heterostructure; strained layer In/sub 0.20/Ga/sub 0.80/As quantum well lasers; threshold current density; waveguide transparency; Charge carrier density; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laser mode locking; Marketing and sales; Quantum well lasers; Substrates; Surface emitting lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
