GaInAsP/InP semiconductor vertical GRIN-lens for semiconductor optical devices

Author

El Yumin, S. ; Komori, Kenji ; Arai, S.

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

6

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

601

Lastpage

604

Abstract

A GaInAsP/InP vertical GRIN-lens (VGL), which is suitable for monolithic integration with semiconductor laser diodes (LDs) or semiconductor laser amplifiers (SLAs), was fabricated for the first time. A narrow FWHM of vertical far-field pattern of 6 degree was experimentally obtained with 8 layers of GRIN core region (8 μm thick) and InP cladding layers. An integration of this VGL with a taper waveguide SLA with the output width of 10 μm was also demonstrated.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; integrated optics; integrated optoelectronics; lenses; semiconductor lasers; 8 mum; GRIN core region; GaInAsP-InP; GaInAsP/InP semiconductor vertical GRIN-lens; InP cladding layers; monolithic integration; narrow FWHM; output width; semiconductor laser amplifiers; semiconductor laser diodes; semiconductor optical devices; taper waveguide SLA; vertical far-field pattern; Indium phosphide; Laser beams; Lenses; Optical devices; Optical waveguides; Refractive index; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.285554

Filename

285554