Title :
Short-term wavelength changes in 1.5-μm InGaAsP-InP distributed feedback semiconductor lasers
Author :
Jeong, J. ; Song, M.K. ; Jang, D.H. ; Park, K.H.
Author_Institution :
Dept. of Radio Eng., Korea Univ., Seoul, South Korea
Abstract :
We report short-term lasing wavelength changes in 1.5-μm InGaAsP-InP distributed feedback (DFB) lasers. The lasing wavelengths after biasing the lasers have been changed upto 1.2 /spl Aring/ at 20/spl deg/C while maintaining the constant output power. It takes over 700-2000 s, to stabilize the lasing wavelengths in many lasers. The annealing effects could be partially responsible for the wavelength change. It certainly affects the initial performance of cold-start frequency-division-multiplexed systems.
Keywords :
III-V semiconductors; annealing; distributed feedback lasers; frequency division multiplexing; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser feedback; laser frequency stability; laser transitions; optical communication equipment; semiconductor lasers; /spl mu/m InGaAsP-InP distributed feedback semiconductor lasers; 1.5 mum; 20 C; 700 to 2000 s; DFB lasers; InGaAsP-InP; annealing effects; cold-start frequency-division-multiplexed systems; constant output power; initial performance; lasing wavelength stabilisation; lasing wavelengths; short-term wavelength changes; wavelength change; Distributed feedback devices; Frequency; Laser feedback; Laser stability; Laser transitions; Laser tuning; Power lasers; Semiconductor lasers; Wavelength division multiplexing; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
