Title :
Room temperature photopumped 1.5 mu m quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectors
Author :
Tai, K. ; Choa, F.S. ; Tsang, W.T. ; Chu, S.N.G. ; Wynn, J.D. ; Sergent, A.M.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Room temperature surface emitting laser near 1.5 mu m wavelength was observed via photopumping in vertical cavity structures with epitaxially grown InGaAsP/InP distributed Bragg reflectors. The use of only six 40 AA strained InGaAs quantum wells as gain medium indicated that high reflectivity was achieved in the Bragg reflectors and low threshold current operation would be possible for electric injection with proper current confinement schemes.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; InGaAsP-InP; current confinement schemes; distributed Bragg reflectors; electric injection; gain medium; photopumping; quantum well surface emitting lasers; reflectivity; threshold current operation; vertical cavity structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910967
