Title :
Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes
Author :
Yu, J. ; Tarof, L.E. ; Bruce, R. ; Knight, D.G. ; Visvanatha, K. ; Baird, T.
Author_Institution :
Adv. Technol. Lab., Bell-Northern Res., Ottawa, Ont., Canada
fDate :
5/1/1994 12:00:00 AM
Abstract :
The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3×10/sup 12/ cm/sup -2/) and high field InP thickness (0.09-0.62 μm). It is found that the effective k of 0.38 is nearly independent of these parameters. These observations are consistent with ionization both inside and outside the high-field InP region. Furthermore, the temperature dependence was investigated, with the result that k increases slightly from 0.42 to 0.53 with increasing temperature in the range -30 to +85/spl deg/C.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device noise; -30 to 85 C; InP-InGaAs; InP/InGaAs avalanche photodiodes; SAGCM structure; high-field region; ionization; noise performance; planar separate absorption grading charge and multiplication; room temperature; temperature dependence; Absorption; Avalanche photodiodes; Fabrication; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Ionization; Temperature dependence; Temperature distribution; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
