DocumentCode
1086851
Title
High-speed monolithic InP/InGaAs pin-photodiode array with small pitch
Author
Emeis, N. ; Kunkel, W. ; Hoffmann, Lionel ; Ebbinghaus, G.
Author_Institution
Siemens Res. Labs., Munchen, Germany
Volume
27
Issue
17
fYear
1991
Firstpage
1550
Lastpage
1551
Abstract
Monolithic arrays of four InP/InGaAs pin photodiodes for wavelength division multiplexing applications have been fabricated on semi-insulating InP substrate. The diodes have a diameter of 30 mu m on a 60 mu m pitch. Deep trenches are used to isolate the individual diodes from each other. A crosstalk below -30 dB is achieved for frequencies up to about 3.3 GHz. Pulse measurements at the individual diodes show a falltime of 33 ps corresponding to a 3 dB bandwidth in excess of 10 GHz.
Keywords
III-V semiconductors; frequency division multiplexing; gallium arsenide; indium compounds; p-i-n diodes; photodiodes; 3 dB bandwidth; 60 micron; InP; InP-InGaAs; crosstalk; deep trenches; falltime; pin-photodiode array; pulse measurements; wavelength division multiplexing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910972
Filename
132800
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