Title :
Accurate measurement technique for base transit time in heterojunction bipolar transistors
Author :
Lee, S. ; Gopinath, A. ; Pachuta, S.J.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0*1019 cm-3 of AlGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the AlxGa1-xAs/GaAs composition graded base HBT was also measured using this technique.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier mobility; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; HBTs; III-V semiconductors; Monte Carlo simulations; base transit time; composition graded; heterojunction bipolar transistors; minority electron mobility; phase-shift analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910973
