• DocumentCode
    1086863
  • Title

    Accurate measurement technique for base transit time in heterojunction bipolar transistors

  • Author

    Lee, S. ; Gopinath, A. ; Pachuta, S.J.

  • Author_Institution
    Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
  • Volume
    27
  • Issue
    17
  • fYear
    1991
  • Firstpage
    1551
  • Lastpage
    1553
  • Abstract
    The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0*1019 cm-3 of AlGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the AlxGa1-xAs/GaAs composition graded base HBT was also measured using this technique.
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier mobility; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; HBTs; III-V semiconductors; Monte Carlo simulations; base transit time; composition graded; heterojunction bipolar transistors; minority electron mobility; phase-shift analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910973
  • Filename
    132801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1086863