Title :
Improvement of bandwidth-to-drive-voltage of an electroabsorption modulator employing a double-pass configuration
Author :
Yamada, K. ; Nakamura, K. ; Ogawa, Y.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
We propose and demonstrate an electroabsorption modulator using a double-pass configuration that enabled us to overcome the tradeoff between expanding modulation bandwidth and increasing extinction efficiency. The 130-μm device, which has a bulk absorption layer, demonstrated a 10 dB extinction ratio with an applied voltage ranging from 0 to -0.9 V and a modulation bandwidth exceeding 20 GHz corresponding to a 200% improvement in the bandwidth-to-drive-voltage over a conventional single-passing modulator.
Keywords :
electro-optical modulation; electroabsorption; optical communication equipment; 0 to 0.9 V; 130 mum; 20 GHz; InGaAsP; applied voltage; bandwidth-to-drive-voltage; bulk absorption layer; double-pass configuration; electroabsorption modulator; extinction efficiency; extinction ratio; modulation bandwidth; Absorption; Bandwidth; Optical attenuators; Optical devices; Optical films; Optical materials; Optical modulation; Optical solitons; Optical waveguides; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
