• DocumentCode
    1086873
  • Title

    High performance 634 nm InGaP/InGaAlP strained quantum well lasers

  • Author

    Chang-Hasnain, Connie J. ; Bhat, Ritesh ; Koza, M.A.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    27
  • Issue
    17
  • fYear
    1991
  • Firstpage
    1553
  • Lastpage
    1555
  • Abstract
    The first strained InGaP/InGaAlP quantum well lasers emitting at 634 nm are reported. High optical power exceeding 600 mW and low threshold current density of 1.7 kA/cm2 were obtained with 20 mu m wide broad stripe lasers with uncoated facets. This power and threshold current density are believed to be the best reported to date for diode lasers emitting near 630 nm.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 634 nm; InGaP-InGaAlP; broad stripe lasers; diode lasers; optical power; strained quantum well lasers; threshold current density; uncoated facets;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910974
  • Filename
    132802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1086873