Three-section semiconductor optical amplifier for monitoring of optical gain

Author

Newkirk, M.A. ; Koren, U. ; Miller, B.I. ; Chien, M.D. ; Young, M.G. ; Koch, T.L. ; Raybon, G. ; Burrus, C.A. ; Tell, B. ; Brown-Goebeler, K.F.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

4

Issue

11

fYear

1992

Firstpage

1258

Lastpage

1260

Abstract

A 1.5- mu m multiquantum well amplifier divided into three sections with short contacts at the input and output facets is described. A simple derivation shows that the amplifier optical gain is proportional to the ratio of voltage changes at the facet contacts induced by the optical signal. Measurements of optical gain and contact voltage as a function of amplifier bias current are in good agreement with the theory.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.5 micron; IR; InGaAs-InGaAsP; MQW amplifier; amplifier bias current; amplifier optical gain; contact voltage; facet contacts; input facets; optical signal; output facets; semiconductor optical amplifier; short contacts; three-section laser diode; voltage changes; Monitoring; Optical amplifiers; Optical ring resonators; Optical saturation; Optical sensors; Optical signal processing; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.166961

Filename

166961