A simple punchthrough model for short-channel MOSFET´s

Punchthrough currents impose severe limitations on the minimum channel length and leakage currents of scaled MOS transistors. A simple model is proposed to calculate the low-level punchthrough characteristics. Taking into account the two-dimensional geometrical effects, this model calculates the drain-induced barrier-lowering (DIBL) and the punchthrough current as a function of the processing parameters, and the gate, drain, and substrate bias. Experiments on devices with substrate dopings 6 × 10¹⁴and 6.6 × 10¹⁵cm^-3and channel lengths from 1 to 2 µm show good agreement with the theory.