Vertical cavity surface-emitting semiconductor laser with CW injection laser pumping

Author

McDaniel, D.L., Jr. ; McInerney, J.G. ; Raja, M.Y.A. ; Schaus, C.F. ; Brueck, S.R.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

2

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

156

Lastpage

158

Abstract

Room-temperature CW operation of a GaAs/AlGaAs vertical cavity surface-emitting laser with a resonant periodic gain medium, using a GaAs/AlGaAs diode laser array as a pump source, is discussed. Pumping thresholds as low as 11 mW at 730 nm, output powers as high as 10 mW at 856 nm, and external quantum efficiencies as high as 70% are obtained, with considerably improved temporal and spatial coherence properties compared to the pump laser. This is the first reported operation of such a laser with an efficient, compact pump source, demonstrating its suitability for efficient integration.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical pumping; semiconductor junction lasers; 10 mW; 11 mW; 70 percent; 730 nm; 856 nm; CW injection laser pumping; GaAs-AlGaAs; GaAs/AlGaAs diode laser array; compact pump source; external quantum efficiencies; output powers; pump laser; pump source; pumping thresholds; resonant periodic gain medium; semiconductor laser; spatial coherence properties; temporal coherence properties; vertical cavity surface-emitting laser; Diode lasers; Gallium arsenide; Laser excitation; Optical arrays; Pump lasers; Resonance; Semiconductor laser arrays; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.50873

Filename

50873