Title :
Gain characteristics of a distributed IMPATT device
Author_Institution :
San Francisco State University, San Francisco, CA
fDate :
10/1/1983 12:00:00 AM
Abstract :
We have analyzed the gain characteristics of a distributed IMPATT device for CW power generation in the microwave and millimeter-wave regions. The results indicate that the structure has high-gain and wide-band characteristics. With Si as diode material, the calculated gain is greater than 200 dB per centimeter over a wide range of frequencies.
Keywords :
CMOS process; CMOS technology; Cutoff frequency; Distributed power generation; Electron devices; Maxwell equations; Microwave devices; Semiconductor diodes; Solid state circuits; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21309
