Title :
Simple batch processing for forming high-reflective mirrors of short-cavity AlGaAs/GaAs lasers
Author :
Shieh, C. ; Mantz, J. ; Alavi, K. ; Engelmann, R.
Author_Institution :
GTE Lab., Waltham, MA, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
A simple technology for fabricating a short-cavity AlGaAs/GaAs laser with a high-reflective mirror that is compatible with batch processing is described. Chlorine-assisted ion beam etching was used for providing one of the facet reflectors. For increased reflectivity, the etched facet was anodized and then metallized simultaneously with the p-contact metallization step. A threshold current of 8 mA for a six-quantum-well separate confinement structure was achieved with a cavity length of 50 mu m.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; laser cavity resonators; mirrors; reflectivity; 30 micron; 8 mA; AlGaAs-GaAs; Cl assisted ion beam etching; anodized; batch processing; cavity length; etched facet; facet reflectors; high-reflective mirrors; increased reflectivity; ion beam etching; metallized; p-contact metallization step; short cavity lasers; six-quantum-well separate confinement structure; threshold current; DH-HEMTs; Etching; Gallium arsenide; Ion beams; Metallization; Mirrors; Pump lasers; Quantum well devices; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
