Effects of layer thickness variations on vertical-cavity surface-emitting DBR semiconductor lasers

Author

Weber, Jean-Pierre ; Malloy, Keviin ; Wang, Shys

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

2

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

162

Lastpage

164

Abstract

A theoretical analysis of the influence of layer thickness variation in vertical-cavity surface-emitting lasers with distributed Bragg reflectors (DBRs) on lasing wavelength is presented. It is shown that changing the active region length of one of the layers in the DBR mirror by only one unit cell (0.56 nm) is sufficient to produce shifts in the lasing wavelength up to 0.12 nm (for an AlGaAs laser). This could limit the precision with which a desired wavelength, its reproducibility, and its uniformity across a large wafer can be obtained. Possible influences on the linewidth of broad area devices are also discussed.<>

Keywords

distributed Bragg reflector lasers; laser accessories; laser cavity resonators; laser theory; mirrors; semiconductor junction lasers; 0.56 nm; AlGaAs; DBR mirror; active region length; broad area device linewidth; broad area devices; distributed Bragg reflectors; large wafer; lasing wavelength; lasing wavelength shifts; layer thickness variations; reproducibility; vertical-cavity surface-emitting DBR semiconductor lasers; Distributed Bragg reflectors; Laser modes; Laser theory; Mirrors; Optical surface waves; Pump lasers; Semiconductor lasers; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.50875

Filename

50875