Title :
GaAs/GaAlAs injection lasers grown by MOCVD
Author :
Scifres, D. ; Burnham, R. ; Streifer, W. ; Yingling, R. ; Tramontana, J. ; Bernstein, Michael ; Mosby, W. ; Endicott, F.
Author_Institution :
Xerox Research Center, Palo Alto, CA, USA
fDate :
12/1/1981 12:00:00 AM
Keywords :
Chemical lasers; Gallium arsenide; Heating; Laser beam cutting; Laser modes; MOCVD; Photonic band gap; Polarization; Tellurium; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071006
