DocumentCode
1087202
Title
Low threshold current density of 620 nm band MQW-SCH AlGaInP semiconductor lasers with Mg doped AlInP cladding layer
Author
Murata, Hidekazu ; Terui, Y. ; Saitoh, Masatoshi ; Satoh, Y. ; Terasaki, R.
Author_Institution
Denki Kagaku Kogyo Co. Ltd., Tokyo, Japan
Volume
27
Issue
17
fYear
1991
Firstpage
1569
Lastpage
1571
Abstract
Mg doped AlInP was used as the p-type cladding layer of 620 nm-band multiple quantum well separate confinement heterostructure (MQW-SCH) AlGaInP semiconductor lasers for the first time. The low threshold current density of 1.81 kA cm-2 for broad area lasers (stripe width: 50 mu m, cavity length: 300 mu m) was obtained at 628 nm.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; 300 micron; 50 micron; 620 to 628 nm; AlGaInP; AlInP:Mg cladding layer; MQW-SCH; broad area lasers; low threshold current density; multiple quantum well separate confinement heterostructure; p-type cladding layer; semiconductor lasers; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910983
Filename
132810
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