DocumentCode :
1087215
Title :
Numerical Analysis of Gain Saturation, Noise Figure, and Carrier Distribution for Quantum-Dot Semiconductor-Optical Amplifiers
Author :
Xiao, Jin-Long ; Huang, Yong-Zhen
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Volume :
44
Issue :
5
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
448
Lastpage :
455
Abstract :
The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (QD-SOAs). The carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. The longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. The saturation output power 19.7 dBm and device gain 20.6 dB are obtained for a QD-SOA with the cavity length of 6 mm at the bias current of 500 mA. The influences of the electron intradot relaxation time and the QD capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. The noise figure as low as 3.5 dB is expected due to the strong polarization sensitive spontaneous emission. The characteristics of gain saturation and noise figure versus input signal power for QD-SOAs are similar to that of semiconductor linear optical amplifiers with gain clamping by vertical laser fields.
Keywords :
numerical analysis; quantum dot lasers; reflectivity; semiconductor optical amplifiers; superradiance; amplified spontaneous emission; carrier distribution; current 500 mA; electron intradot relaxation time; gain 20.6 dB; gain saturation; noise figure; photon distribution; photon energy dependent facet reflectivity; quantum-dot semiconductor-optical amplifiers; size 6 mm; time 1 ps to 10 ps; time 30 ps; time 60 ps; Distributed amplifiers; Electrons; Equations; Noise figure; Numerical analysis; Quantum dots; Reflectivity; Semiconductor optical amplifiers; Spontaneous emission; Stationary state; Gain; noise; quantum dots (QDs); semiconductor-optical amplifiers (SOAs);
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2007.916683
Filename :
4459783
Link To Document :
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