Title :
High-efficiency reflection modulators using lifted-off GaAs/AlGaAs layers bonded to gold on silicon
Author :
Yoffe, Gideon W.
Author_Institution :
Telecom Australia Res. Labs., Clayton, Vic., Australia
Abstract :
Highly efficient, normally-on and normally-off asymmetric Fabry-Perot reflection modulators using lifted-off GaAs/AlGaAs multiquantum-well structures are reported. The epitaxial layers, less than 1.5 mu m thick, were bonded to silicon wafers coated with gold, which served as the rear mirrors and as electrical contacts. Modulation ratios up to 40:1 and reflectivity changes over 60% were obtained, equalling the best results from all-epitaxial devices.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optoelectronics; optical interconnections; optical modulation; semiconductor epitaxial layers; semiconductor quantum wells; 1.5 micron; Fabry-Perot reflection modulators; GaAs-AlGaAs-Au-Si; OEIC; Si wafers; all-epitaxial devices; electrical contacts; epitaxial layers; high efficiency reflection modulators; modulation ratios; multiquantum-well structures; optical interconnect; rear mirrors; reflectivity changes; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910989
