• DocumentCode
    1087375
  • Title

    I-2 device performance of high speed III-V semiconductor devices

  • Author

    Soloman, P.

  • Volume
    30
  • Issue
    11
  • fYear
    1983
  • fDate
    11/1/1983 12:00:00 AM
  • Firstpage
    1564
  • Lastpage
    1564
  • Keywords
    CMOS technology; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Logic circuits; Logic devices; MESFET circuits; Semiconductor device modeling; Semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21338
  • Filename
    1483239