DocumentCode
1087375
Title
I-2 device performance of high speed III-V semiconductor devices
Author
Soloman, P.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1564
Lastpage
1564
Keywords
CMOS technology; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Logic circuits; Logic devices; MESFET circuits; Semiconductor device modeling; Semiconductor devices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21338
Filename
1483239
Link To Document