DocumentCode :
1087375
Title :
I-2 device performance of high speed III-V semiconductor devices
Author :
Soloman, P.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1564
Lastpage :
1564
Keywords :
CMOS technology; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Logic circuits; Logic devices; MESFET circuits; Semiconductor device modeling; Semiconductor devices;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21338
Filename :
1483239
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1087375
