• DocumentCode
    1087388
  • Title

    Impedance-controlled wideband active balun based on current conveyors

  • Author

    Godara, B. ; Fabre, A.

  • Author_Institution
    Inst. Super. d´´ Electron. de Paris, Paris
  • Volume
    43
  • Issue
    16
  • fYear
    2007
  • Firstpage
    865
  • Lastpage
    867
  • Abstract
    The first active power-split balun with controllable output impedance is proposed. Its operation is wideband, with good balance characteristics from DC to 3 GHz. It takes up 0.036 mm in a 0.35 mum SiGe BiCMOS technology and is the smallest balun ever observed. Its additional properties are: excellent and wideband overall S-parameter performance; highest linearity observed for a balun; and stability against temperature and process variations.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; S-parameters; baluns; microwave integrated circuits; semiconductor materials; stability; BiCMOS technology; S-parameter performance; SiGe; active power-split balun; current conveyors; frequency 3 GHz; impedance-controlled wideband active balun; size 0.13 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070479
  • Filename
    4286778