Title :
IIA-1 (GaAl)As/GaAs heterojunction dipolar transistors with graded composition in the base
Author :
Miller, Douglas L. ; Asbeck, P.M. ; Anderson, R.J. ; Eisen, F.H.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Bipolar transistors; Cutoff frequency; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Packaging; Photonic band gap; Substrates; Velocity measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21340
