• DocumentCode
    1087410
  • Title

    Control of gate leakage in InAlAs/InGaAs HEMTs

  • Author

    Newson, D.J. ; Merrett, R.P. ; Ridley, B.K.

  • Author_Institution
    British Telecom Labs., Ipswich, UK
  • Volume
    27
  • Issue
    17
  • fYear
    1991
  • Firstpage
    1592
  • Lastpage
    1593
  • Abstract
    In0.53Ga0.47As FETs exhibit excess gate leakage, caused by impact ionisation in the channel. In JFETs and HFETs this leads to high gate leakage in the peak gain region. It is shown here that suitably fabricated InAlAs/InGaAs HEMTs can have low gate leakage in the high gain region because band bending leads to a lower collection efficiency for holes generated by impact ionisation.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; InAlAs-InGaAs; band bending; gate leakage control; high gain region; impact ionisation; low gate leakage; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910996
  • Filename
    132823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087410