Title :
Control of gate leakage in InAlAs/InGaAs HEMTs
Author :
Newson, D.J. ; Merrett, R.P. ; Ridley, B.K.
Author_Institution :
British Telecom Labs., Ipswich, UK
Abstract :
In0.53Ga0.47As FETs exhibit excess gate leakage, caused by impact ionisation in the channel. In JFETs and HFETs this leads to high gate leakage in the peak gain region. It is shown here that suitably fabricated InAlAs/InGaAs HEMTs can have low gate leakage in the high gain region because band bending leads to a lower collection efficiency for holes generated by impact ionisation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; InAlAs-InGaAs; band bending; gate leakage control; high gain region; impact ionisation; low gate leakage; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910996
