Title :
Long incubation times for selective epitaxial growth of silicon using silane only
Author :
Parker, Gregory J. ; Bonar, J.M. ; Starbuck, C.M.K.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
Following earlier work, extremely long incubation times in the selective epitaxial growth of silicon using silane only as the source gas are reported. The incubation time is defined as the total deposition time that elapses before deposition of polysilicon on the masking dielectric begins to occur. Fully selective silicon layers greater than 1 mu m thick have been grown on
Keywords :
chemical vapour deposition; semiconductor epitaxial layers; semiconductor growth; silicon; silicon compounds; vapour phase epitaxial growth; 30 min; Si growth; SiH 4 gas; long incubation times; selective epitaxial growth; total deposition time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910998
