Title :
Intersubband absorption of GaAs/AlGaAs quantum wells in MBE grown mid-infrared slab waveguides
Author :
Yang, D.D. ; Julien, F.H. ; Boucaud, P. ; Lourtioz, J.M. ; Planel, R.
Author_Institution :
Inst. d´´Electron. Fondamentale, Paris XI Univ., Orsay, France
fDate :
3/1/1990 12:00:00 AM
Abstract :
A structure to enhance the absorbance due to intersubband transitions in GaAs/AlGaAs quantum wells is discussed. Mid-infrared slab waveguides including 30 quantum wells were grown using molecular-beam epitaxy (MBE). Photoluminescence experiments revealed an excellent uniformity of the samples. Absorption measurements over the whole 9-13.4- mu m spectral range were performed for the first time using the combination of CO/sub 2/ and NH/sub 3/ lasers. Effective absorbance due to intersubband transitions as high as 14 dB were measured for 3-mm-long waveguides. The waveguide structure is expected to be a good candidate for optoelectronic devices in the 10- mu m region.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; light absorption; molecular beam epitaxial growth; optical waveguides; semiconductor quantum wells; 10 micron; 3 nm; 9 to 13.4 micron; CO/sub 2/; GaAs-AlGaAs; MBE; MBE grown; NH/sub 3/ lasers; absorption measurements; intersubband absorption; intersubband transitions; mid-IR slab waveguides; molecular-beam epitaxy; optoelectronic devices; photoluminescence; quantum wells; waveguide structure; Absorption; Gallium arsenide; Laser transitions; Molecular beam epitaxial growth; Performance evaluation; Photoluminescence; Quantum well lasers; Slabs; Time measurement; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
