Title :
IIA-4 mobility measurements in submicron-gate modulation-doped AlxGa1-xAs/GaAs heterojunction FETs
Author :
Wallis, R.H. ; Delescluse, P. ; Laviron, M. ; Delagebeaudeuf, D.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Low-frequency noise; MODFETs; Noise measurement; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21344
