Title :
IIA-5 low frequency noise in AlGaAs-GaAs MODFET and its implication for device performance
Author :
Peczalski, A. ; van der Ziel, A.
fDate :
11/1/1983 12:00:00 AM
Keywords :
1f noise; Degradation; Frequency measurement; Gallium arsenide; HEMTs; Low-frequency noise; MODFET circuits; Noise measurement; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21345
