Title :
IIA-6 sensitivity of threshold voltage and sheet carrier concentration to material and electronic parameters in a HEMT device
fDate :
11/1/1983 12:00:00 AM
Keywords :
Doping; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; High speed integrated circuits; Ring oscillators; Sheet materials; Temperature sensors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21346
