DocumentCode
1087500
Title
IIA-7 ultra high speed integrated circuits using GaAs/GaAlAs high electron mobility transistors
Author
Lee, Charlotte P. ; Miller, Douglas L. ; Hou, Dong ; Anderson, R.J.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1569
Lastpage
1569
Keywords
Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; High speed integrated circuits; MODFETs; MOSFETs; Microelectronics; Ring oscillators; Temperature measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21347
Filename
1483248
Link To Document