DocumentCode :
1087510
Title :
IIA-8 device characteristics of short channel high electron mobility transistor (HEMT)
Author :
Nishiuchi, K. ; Mimura, Takashi ; Kuroda, Sho ; Hiyamizu, S. ; Nishi, Hidetaka ; Abe, Makoto
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1569
Lastpage :
1570
Keywords :
Charge carrier processes; Circuit testing; Current measurement; Flip-flops; Gallium arsenide; HEMTs; MODFETs; Substrates; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21348
Filename :
1483249
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1087510
