New de-embedding method for millimetre-wave bipolar transistor S-parameter measurement

An improved de-embedding method is used to measure the intrinsic HBT S parameters to millimetre wave frequencies. Standard twelve-error element models and dummy pads with resistors as calibration standards are used. This new method correctly reveals the effect from the extra delay time, parasitic capacitance, and parasitic inductance introduced by the layout and enables the performance at millimetre-wave frequencies to be accurately predicted.