DocumentCode

1087531

Title

IIB-1 two components of tunneling current in metal-oxide-semiconductor structures

Author

Eitan, B. ; Kolodny, Avinoam

Volume

30

Issue

11

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1570

Lastpage

1571

Keywords

Charge carrier processes; Current measurement; Dielectric losses; Electrons; Interface states; MOS capacitors; Silicon; Substrates; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1983.21349

Filename

1483250