DocumentCode

1087540

Title

IIB-2 direct tunneling in thin gate-oxide MOS structure

Author

Chi Chang ; Brodersen, R.W. ; Mong-Song Liang

Volume

30

Issue

11

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1571

Lastpage

1572

Keywords

Dielectric losses; EPROM; Electrons; Laboratories; Leakage current; Low voltage; Nonvolatile memory; Read-write memory; Snow; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1983.21350

Filename

1483251