Title :
IIB-2 direct tunneling in thin gate-oxide MOS structure
Author :
Chi Chang ; Brodersen, R.W. ; Mong-Song Liang
fDate :
11/1/1983 12:00:00 AM
Keywords :
Dielectric losses; EPROM; Electrons; Laboratories; Leakage current; Low voltage; Nonvolatile memory; Read-write memory; Snow; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21350
