Title :
Novel pseudomorphic InGaAs/AlGaAs SISFET and HIGFET structures for direct coupled FET logic
Author :
Morton, C.G. ; Allsopp, D.W.E.
Abstract :
Novel methods of implementing direct coupled FET logic using GaAs-based pseudomorphic quasisquare quantum well HFETs have been identified from selfconsistent calculations of their charge control curves. The techniques are based on a new depletion-mode SISFET structure in which the n+ contact layer has a wider bandgap than the channel layer. Enhancement mode driver FETs are obtained by replacing the n+ contact with a Schottky barrier to create a HIGFET.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; integrated logic circuits; DCFL; HIGFET structures; Schottky barrier; bandgap; channel layer; charge control curves; depletion-mode SISFET structure; direct coupled FET logic; enhancement-mode HIGFET; pseudomorphic HFETs; pseudomorphic quasisquare quantum well; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911011
