Title :
IIB-3 analysis and modeling of floating-gate E2Prom cells
Author :
Kolodny, Avinoam ; Nieh, S. ; Eitan, B. ; Shappir, Joseph
fDate :
11/1/1983 12:00:00 AM
Keywords :
Capacitance; Design optimization; Dielectric devices; Electrons; MOSFETs; Nonvolatile memory; Numerical models; Silicon; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21351
