Title :
IIB-4 analysis of the channel inversion layer capacitance in the very thin-gate IGFET
Author :
Soo-Young Oh ; Sodini, Charlie G. ; Moll, J.L.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Capacitance measurement; Circuits; Constraint theory; Degradation; Electron devices; Insulation; MOSFETs; Thickness measurement; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21352
