DocumentCode
1087570
Title
IIB-4 analysis of the channel inversion layer capacitance in the very thin-gate IGFET
Author
Soo-Young Oh ; Sodini, Charlie G. ; Moll, J.L.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1572
Lastpage
1573
Keywords
Capacitance measurement; Circuits; Constraint theory; Degradation; Electron devices; Insulation; MOSFETs; Thickness measurement; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21352
Filename
1483253
Link To Document