Title :
IIB-7 elimination of radiation-induced interface states by nitridation
Author :
Wyatt, P.W. ; Senturia, S.D.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Annealing; Charge carrier lifetime; Current measurement; Electrons; Gain measurement; Interface states; Laser modes; Quantum well devices; Quantum well lasers; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21355
