Title :
Monolithically integrated four-channel receiver array using diffused InGaAs (JFET technology)
Author :
Mansfield, C. ; Newson, D.J. ; Birdsall, P. ; Young, R. ; Merrett, R.P.
Author_Institution :
British Telecom Labs., Martlesham Heath, UK
Abstract :
Four-channel receiver arrays have been fabricated by monolithically integrating diffused InGaAs JFET-based electronics with InGaAs pin photodiodes. Cascode and simple inverter transimpedance amplifier circuits have been produced, both of which use a micro-FET as a tunable feedback element to vary bandwidth between 20 and 800 MHz. A sensitivity of -28.2 dBm was achieved at 1.25 Gbit/s with crosstalk between adjacent channels of -50 dB (electrical).
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; p-i-n diodes; photodiodes; receivers; 1.25 Gbit/s; 20 to 800 MHz; InGaAs; OEIC; bandwidth; crosstalk; four-channel receiver array; inverter transimpedance amplifier circuits; micro-FET; optical receivers; pin photodiodes; semiconductors; sensitivity; tunable feedback element;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911020
