Title :
IIIA-4 resonant tunneling through quantum wells at 2.5 THz
Author :
Sollner, T.C.L.G. ; Goodhue, W.D. ; Tannenwald, P.E. ; Parker, C.D.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Charge carrier processes; Frequency; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Photoluminescence; Resonant tunneling devices; Sampling methods; Semiconductor superlattices; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21359
