DocumentCode :
1087681
Title :
IIIA-5 direct-indirect transitions in GaSb-AlSb superlattices
Author :
Wang, W.I. ; Mendez, E.E. ; Chang, C.A. ; Chang, L.L. ; Esaki, L.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1577
Lastpage :
1577
Keywords :
Charge carrier processes; Gallium arsenide; Molecular beam epitaxial growth; Optical fiber losses; Optical fibers; Periodic structures; Photoluminescence; Sampling methods; Semiconductor superlattices; Signal resolution;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21361
Filename :
1483262
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1087681
