DocumentCode
1087722
Title
IIIB-1 High accuracy physical modeling of submicron MOSFET´s
Author
Wilson, C.L.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1579
Lastpage
1580
Keywords
Capacitance-voltage characteristics; Current measurement; Doping profiles; Electrical resistance measurement; Equations; Heterojunctions; MOSFETs; Semiconductor devices; Semiconductor process modeling; Uncertainty;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21364
Filename
1483265
Link To Document